| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Temperature Effects of Piezoresistance Coefficient |
TAN Zhen-Xin, XUE Chen-Yang, HOU Ting-Ting, LIU Jun, ZHANG Bin-Zhen, ZHANG Wen-Dong |
| Department of Electronic Science and Technology, North University of China, Taiyuan 030051 |
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| Cite this article: |
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TAN Zhen-Xin, XUE Chen-Yang, HOU Ting-Ting et al 2010 Chin. Phys. Lett. 27 088505 |
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Abstract A higher sensitivity is achieved by making use of a high electron mobility transistor (HEMT) as the piezoresistive device. The temperature dependence on the electromechanical coupling effect of accelerometers is reported. The current in the structure of our study decreases at the rate of 3.15 mA/ºC with the temperature going up at every region, and piezoresistance coefficient decreases because of the shift of energy and expansion of lattice.
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| Keywords:
85.85.+j
85.30.-z
85.30.De
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Received: 01 January 2010
Published: 28 July 2010
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| PACS: |
85.85.+j
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(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
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85.30.-z
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(Semiconductor devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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