Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

doi:10.1088/0256-307X/27/8/088501

Chin. Phys. Lett.

2010, Vol. 27

Issue (8): 088501 DOI: 10.1088/0256-307X/27/8/088501

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

GONG Yue-Feng^1,2, SONG Zhi-Tang¹, LING Yun¹, LIU Yan¹, LI Yi-Jin¹, FENG Song-Lin¹

¹State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ²Graduate School of the Chinese Academic of Sciences, Beijing 100049

Cite this article:

GONG Yue-Feng, SONG Zhi-Tang, LING Yun et al 2010 Chin. Phys. Lett. 27 088501

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Abstract

Simulation of the heat consumption in phase change random access memories (PCRAMs) is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET process. The buffer layer materials W, TiN, WO₃, TiO₂ and poly-germanium (poly-Ge) are applied in the simulation respectively, and compared with each other. The simulation results show that limitation of electrical conductivity is effective on heating efficiency and the limitation of thermal conductivity is important on the reliable RESET process.

Keywords: 85.50.-n 81.05.Gc 83.10.Tv 44.10.+i

Received: 05 May 2010 Published: 28 July 2010

PACS:	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	81.05.Gc	(Amorphous semiconductors)
	83.10.Tv	(Structural and phase changes)
	44.10.+i	(Heat conduction)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/8/088501 OR https://cpl.iphy.ac.cn/Y2010/V27/I8/088501

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	GONG Yue-Feng
	SONG Zhi-Tang
	LING Yun
	LIU Yan
	LI Yi-Jin
	FENG Song-Lin

[1] Kang D, Kim I H, Jeong J H et al 2006 J. Appl. Phys. 100 054506
[2] Kim Y T, Hwang Y N, Lee K H et al 2005 Jpn. J. Appl. Phys. 44 2701
[3] Morales-Sanchez E, Prokhorov E F, Gonzalez-Hernandez J et al 2005 Thin Solid Films 471 243
[4] Zhang T, Song Z T, Gong Y F et al 2008 Appl. Phys. Lett. 92 113503
[5] Xu C, Song Z T et al 2008 Appl. Phys. Lett. 92 062103
[6] Rao F, Song Z T, Gong Y F et al 2008 Appl. Phys. Lett. 92 223507
[7] Gong Y F et al 2009 Jpn. J. Appl. Phys. 48 064505
[8] Gong Y F et al 2008 Chin. Phys. Lett. 25 3455

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