Chin. Phys. Lett.  2010, Vol. 27 Issue (8): 088105    DOI: 10.1088/0256-307X/27/8/088105
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate

DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093
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DU Xiao-Zhang, LU Hai, CHEN Dun-Jun et al  2010 Chin. Phys. Lett. 27 088105
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Abstract

We demonstrate an ultra-violet light-emitting diode (UV-LED) fabricated on a bulk GaN substrate with electroluminescence (EL) emission centered at about 340 nm. The UV-LED exhibits low reverse leakage current on the order of 10-9 A under -5 V at room temperature, which can be explained by the low defect density in the epi-structure. The evolution of EL spectra as a function of injection current levels reveals the improved heat dissipation of the LEDs with vertical geometry on the bulk GaN substrate. The unusual increase of EL intensity at elevated temperatures can be explained by thermally assisted p-dopant ionization.

Keywords: 81.05.Ea      85.60.Jb      81.15.Gh     
Received: 05 February 2010      Published: 28 July 2010
PACS:  81.05.Ea (III-V semiconductors)  
  85.60.Jb (Light-emitting devices)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/8/088105       OR      https://cpl.iphy.ac.cn/Y2010/V27/I8/088105
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DU Xiao-Zhang
LU Hai
CHEN Dun-Jun
XIU Xiang-Qian
ZHANG Rong
ZHENG You-Dou
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