Chin. Phys. Lett.  2010, Vol. 27 Issue (7): 076101    DOI: 10.1088/0256-307X/27/7/076101
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Influence of Fe Contamination on the Minority Carrier Lifetime of Multi-crystalline Silicon

MENG Xia-Jie1, MA Zhong-Quan1, LI Feng1, SHEN Cheng1, YIN Yan-Ting2, ZHAO Lei1, LI Yong-Hua1, XU Fei1

1SHU-SOLARE R&D Joint-Lab, Department of Physics, Shanghai University, Shanghai 200444 2Solar EnerTech (Shanghai) Co., Ltd, Shanghai 201206
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MENG Xia-Jie, MA Zhong-Quan, LI Feng et al  2010 Chin. Phys. Lett. 27 076101
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Abstract

We investigate the influence of Fe contamination on the minority carrier lifetimes of multi-crystalline silicon. The minority carrier lifetime is measured by the microwave photoconductive decay method. The original bulk lifetime is about 30 μs after passivation with iodine solution. After intentional Fe contamination, the bulk lifetime declines with increasing temperature. Fast cooling in air conduces to the formation of more interstitial Fe ([Fe]i). Slow cooling through the control of the furnace temperature limits the formation of more [Fe]i, but leads to the formation of precipitation. The data support the idea that the minority carrier lifetime in multi-crystalline silicon mainly depends on the distribution of Fe but not the total amount. A favorite effect of [Fe]i gettering is discovered after conventional phosphorus diffusion, and the [Fe]i concentration remaining in the silicon wafer is acceptable for solar cell applications.

Keywords: 61.72.Sd      81.05.Cy     
Received: 30 November 2009      Published: 28 June 2010
PACS:  61.72.sd (Impurity concentration)  
  81.05.Cy (Elemental semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/7/076101       OR      https://cpl.iphy.ac.cn/Y2010/V27/I7/076101
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MENG Xia-Jie
MA Zhong-Quan
LI Feng
SHEN Cheng
YIN Yan-Ting
ZHAO Lei
LI Yong-Hua
XU Fei
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