| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy |
REN Fan, HAO Zhi-Biao, ZHANG Chen, HU Jian-Nan, LUO Yi |
| Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, and Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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REN Fan, HAO Zhi-Biao, ZHANG Chen et al 2010 Chin. Phys. Lett. 27 068101 |
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Abstract We report an AlN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations (TDs) and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the AlN crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously.
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| Keywords:
81.05.Ea
81.15.Hi
61.72.Dd
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Received: 24 March 2010
Published: 25 May 2010
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.72.Dd
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(Experimental determination of defects by diffraction and scattering)
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[1] Hirayama H, Yatabe, Ohashi T and Kamata N 2008 Phys. Status Solidi C 5 2283
[2] Dahal R, Al Tahtamouni T M, Lin J Y and Jiang H X 2007 Appl. Phys. Lett. 91 243503
[3] Dabiran A M, Wowchak A M, Osinsky A, Xie J, Hertog B, Cui B, Look D C and Chow P P 2008 Appl. Phys. Lett. 93 082111
[4] Sakai M, Ishikawa H, Egawa T, Jimbo T, Umeno M, Shibata T, Asai K, Sumiya S, Kuraoka Y, Tanaka M and Oda O 2002 J. Cryst. Growth 244 6
[5] Yu H, M. Ozturk K, Ozcelik S and Ozbay E 2006 J. Cryst. Growth 293 273
[6] Li X H, Zhong F, Qiu K, Yin Z J and Ji C J 2008 Chin. Phys. B 17 1360
[7] Chen Z, Qhalid Fareed R S, Gaevski M, Adivarahan V, Yang J W, Khan A, Mei J and Ponce F A 2006 Appl. Phys. Lett. 89 081905
[8] Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P and Nakamura S 2008 Appl. Phys. Lett. 93 191906
[9] Shen X Q, Tanizu Y, Ide T and Okumura H 2003 Phys. Status Solidi C 7 2511
[10] Liu B, Fu Q M, Wu K M and Liu C 2008 J. Korean Phys. Soc. 52 S17
[11] Ichimiya A and Cohen P I 2004 Reflection High-energy Electron Diffraction (Cambridge: Cambridge University) p 93
[12] Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W and Khan M A 2002 Appl. Phys. Lett. 81 604
[13] Chierchia R, Böttcher T, Heinke H, Einfeldt S, Figge S and Hommel D 2003 J. Appl. Phys. 93 8918
[14] Zheng X H, Chen H, Yan Z B, Han Y J, Yu H B, Li D S, Huang Q and Zhou J M 2003 J. Cryst. Growth 255 63
[15] Paduano Q S, Weyburne D W, Serafinczuk J, Jasinski J and Liliental-Weber Z 2003 Phys. Status Solidi C 0 2014
[16] Srikant V, Speck J S and Clarke D R 1997 J. Appl. Phys. 82 4286
[17] Lee S R, West A M, Allerman A A, Waldrip K E, Follstaedt D M, Provencio P P, Koleske D D and Abernathy C R 2005 Appl. Phys. Lett. 86 241904
[18] Zhang C, Hao Z B, Ren F, Hu J N and Luo Y 2010 Chin. Phys. Lett. 27 058101
[19] Edgar J H, Strite S, Akaski I, Amano H and Wetzell C 1999 Properties, Processing and Applications of Gallium Nitride and Related (London: INSPEC, the Institution of Electrical Engineers) p 3
[20] Moran B, Wu F, Romanov A E, Mishra U K, Danbaars S P and Speck J S 2004 J. Cryst. Growth 273 38
[21] Webb J B, Tang H, Bardwell J A, Moisa S, Peters C and MacElwee T 2001 J. Cryst. Growth 230 584
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