| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy |
GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, YANG An-Li, ZHENG Gao-Lin, WEI Hong-Yuan, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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GUO Yan, LIU Xiang-Lin, SONG Hua-Ping et al 2010 Chin. Phys. Lett. 27 067302 |
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Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13±0.19 eV, according to the relationship between the conduction band offset ΔEC and the valence band offset ΔEV: Δ EC=EgGaN-EgGe-Δ EV, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6\pm 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.
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| Keywords:
73.40.Kp
79.60.Jv
81.05.Ea
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Received: 15 January 2010
Published: 25 May 2010
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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81.05.Ea
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(III-V semiconductors)
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