Chin. Phys. Lett.  2010, Vol. 27 Issue (6): 067203    DOI: 10.1088/0256-307X/27/6/067203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

GUO Yang, LIU Yao-Ping, LI Jun-Qiang, ZHANG Sheng-Li, MEI Zeng-Xia, DU Xiao-Long

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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GUO Yang, LIU Yao-Ping, LI Jun-Qiang et al  2010 Chin. Phys. Lett. 27 067203
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Abstract

A Van der Pauw Hall measurement is performed on the intended doped ZnO films (Na doped ZnO) grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples (annealing temperature 900°C) show ambiguous carrier conductivity type (n- and p-type) in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.

Keywords: 72.80.Ey      72.60.+g      73.50.Dn      73.50.Pz     
Received: 09 November 2009      Published: 25 May 2010
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  72.60.+g (Mixed conductivity and conductivity transitions)  
  73.50.Dn (Low-field transport and mobility; piezoresistance)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/6/067203       OR      https://cpl.iphy.ac.cn/Y2010/V27/I6/067203
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GUO Yang
LIU Yao-Ping
LI Jun-Qiang
ZHANG Sheng-Li
MEI Zeng-Xia
DU Xiao-Long
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