| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs |
| DENG Hui-Xiong1, JIANG Xiang-Wei1, TANG Li-Ming2 |
| 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2Department of Applied Physics, Hunan University, Changsha 410082 |
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| Cite this article: |
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DENG Hui-Xiong, JIANG Xiang-Wei, TANG Li-Ming 2010 Chin. Phys. Lett. 27 057101 |
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Abstract Using self-consistent calculations of million-atom Schrödinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8 mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.
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| Keywords:
71.15.Dx
73.23.Ad
73.40.Qv
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Received: 15 October 2009
Published: 23 April 2010
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| PACS: |
71.15.Dx
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(Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction))
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73.23.Ad
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(Ballistic transport)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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