Chin. Phys. Lett.  2010, Vol. 27 Issue (4): 047803    DOI: 10.1088/0256-307X/27/4/047803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

XU Jian-Ping1,2, SHI Shao-Bo3, LI Lan1,2, ZHANG Xiao-Song1,2, WANG Ya-Xin3, CHEN Xi-Ming4

1Institute of Material Physics, Key Laboratory of DisplayMaterials and Photoelectric Devices (Ministry of Education), TianjinUniversity of Technology, Tianjin 3003842Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology, Tianjin 3003843Department of Mathematics and Physics, Tianjin University ofTechnology and Education, Tianjin 3002224School of Electronic Information and Communication Engineering,Tianjin University of Technology, Tianjin 300384
Cite this article:   
XU Jian-Ping, SHI Shao-Bo, LI Lan et al  2010 Chin. Phys. Lett. 27 047803
Download: PDF(891KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract

The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si (100) substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700 \circC. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial oxygen (Oi), interstitial zinc (Zni) and zinc vacancy,which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.

Keywords: 78.20.-e      81.40.Jj      61.72.Dd     
Received: 17 September 2009      Published: 27 March 2010
PACS:  78.20.-e (Optical properties of bulk materials and thin films)  
  81.40.Jj (Elasticity and anelasticity, stress-strain relations)  
  61.72.Dd (Experimental determination of defects by diffraction and scattering)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/27/4/047803       OR      https://cpl.iphy.ac.cn/Y2010/V27/I4/047803
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
XU Jian-Ping
SHI Shao-Bo
LI Lan
ZHANG Xiao-Song
WANG Ya-Xin
CHEN Xi-Ming
[1] Zhang X Y et al 2007 Chin. Phys. Lett. 24 1032
[2] ÖzgürÜ et al 2005 J. Appl. Phys. 98 041301
[3] Ko H J et al 2000 Appl. Phys. Lett. 76 1905
[4] Li Y F et al 2007 Appl. Phys. Lett. 91 021915
[5] Cui J P et al 2008 Chin. Phys. Lett. 25 2277
[6] Fouchet A et al 2005 J. Appl. Phys. 96 3228
[7] Srinivasan G et al 2008 Superlattice Microst. 43 112
[8] Aleksandra B D and Yu H L 2006 Small 2 944
[9] Wang X H et al 2008 Chin. Phys. Lett. 25 2993
[10] Khare N et al 2006 Adv. Mater. 18 1449
[11] Gawlak C J et al 1983 J. Vac. Sci. Technol. A 1 415
[12] Puchert M K et al 1996 J. Vac. Sci. Technol. A 14 2220
[13] Gupta V and Mansingh A 1996 J. Appl. Phys. 80 1063
[14] Zhi Z Z et al W 2003 J. Phys. D: Appl. Phys. 36 719
[15] Laurent K et al 2008 J. Phys. D: Appl. Phys. 41 195410
[16] Wang Y G et al 2003 J. Appl. Phys. 94 1597
[17] Menon R et al 2008 J. Appl. Phys. 103 094903
[18] Lu J G et al 2006 J. Appl. Phys. 100 073714
[19] Mandal S et al 2008 Mater. Res. Bull. 43 244
[20] Xu P S et al 2003 Nucl. Instrum. Methods B 199 286
[21] Wang H Q et al 2007 J. Phys. D: Appl. Phys. 40 6549
[22] Xu C X et al 2004 Nanotechnology 15 856
[23] Vanheusden K et al 1996 J. Appl. Phys. 79 7983
Related articles from Frontiers Journals
[1] HU Guo-Hang, ZHAO Yuan-An, LI Da-Wei, XIAO Qi-Ling. Wavelength Dependence of Laser-Induced Bulk Damage Morphology in KDP Crystal: Determination of the Damage Formation Mechanism[J]. Chin. Phys. Lett., 2012, 29(3): 047803
[2] XIANG Xia, SHI Xiao-Yan, GAO Xiao-Lin, JI Fang, WANG Ya-Jun, LIU Chun-Ming, ZU Xiao-Tao. Effect of N-Doping on Absorption and Luminescence of Anatase TiO2 Films[J]. Chin. Phys. Lett., 2012, 29(2): 047803
[3] DOU Fei, ZHANG Xin-Ping** . Charge Transfer Channels in Formation of Exciplex in Polymer Blends[J]. Chin. Phys. Lett., 2011, 28(9): 047803
[4] CHEN Heng-Zhi, YANG Bin**, SUN Yan, ZHANG Ming-Fu, WANG Zhu, ZHANG Rui, ZHANG Zhi-Guo, CAO Wen-Wu, . Optical Temperature Sensor Using Infrared-to-Visible-Frequency Upconversion in Er 3+/Yb 3+−Codoped Bi3TiNbO9 Ceramics[J]. Chin. Phys. Lett., 2011, 28(8): 047803
[5] CHEN Yi-Xin**, SHEN Guang-Di, ZHU Yan-Xu, GUO Wei-Ling, LI Jian-Jun . Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors[J]. Chin. Phys. Lett., 2011, 28(6): 047803
[6] ZHAN Feng**, WANG Hai-Li, HE Ji-Fang, WANG Juan, HUANG She-Song, NI Hai-Qiao, NIU Zhi-Chuan . Multilayer Antireflection Coating for Triple Junction Solar Cells[J]. Chin. Phys. Lett., 2011, 28(4): 047803
[7] LUO Hao, WANG Tao, GONG Rong-Zhou**, NIE Yan, WANG Xian . Extending the Bandwidth of Electric Ring Resonator Metamaterial Absorber[J]. Chin. Phys. Lett., 2011, 28(3): 047803
[8] LIU Chun-Ming**, XIANG Xia, ZHANG Yan, JIANG Yong, ZU Xiao-Tao . Magnetism of a Nitrogen-Implanted TiO2 Single Crystal[J]. Chin. Phys. Lett., 2011, 28(12): 047803
[9] HUANG Jian**, WANG Lin-Jun, TANG Ke, XU Run, ZHANG Ji-Jun, LU Xiong-Gang, XIA Yi-Ben . Photoresponse Properties of an n-ZnS/p-Si Heterojunction[J]. Chin. Phys. Lett., 2011, 28(12): 047803
[10] ZHAO Chuan-Zhen**, LI Na-Na, WEI Tong, TANG Chun-Xiao . Temperature and Composition Dependence of GaNxAs1−x(0 < x ≤ 0.05) before and after Annealing[J]. Chin. Phys. Lett., 2011, 28(12): 047803
[11] WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. Chin. Phys. Lett., 2011, 28(12): 047803
[12] G. Murtaza, Iftikhar Ahmad, **, M. Maqbool, H. A. Rahnamaye Aliabad, A. Afaq . Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications[J]. Chin. Phys. Lett., 2011, 28(11): 047803
[13] LU Yun-Qing, LI Pei-Li, ZHENG Jia-Jin. The Axial Spatial Evolution of Optical Field near the Talbot Plane of a Grating[J]. Chin. Phys. Lett., 2010, 27(9): 047803
[14] ZHAO Chuan-Zhen, ZHANG Rong, LIU Bin, LI Ming, XIE Zi-Li, XIU Xiang-Qian, ZHENG You-Dou. Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs[J]. Chin. Phys. Lett., 2010, 27(7): 047803
[15] ZHU Shao-Li, ZHOU Wei. Effect of Media on the Electric Field of a Rhombic Nanostructure Array[J]. Chin. Phys. Lett., 2010, 27(6): 047803
Viewed
Full text


Abstract