Chin. Phys. Lett.  2010, Vol. 27 Issue (3): 034209    DOI: 10.1088/0256-307X/27/3/034209
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser
JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, LIU Yu3, XIE Liang3, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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JI Hai-Ming, YANG Tao, CAO Yu-Lian et al  2010 Chin. Phys. Lett. 27 034209
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Abstract We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50ºC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.
Keywords: 42.55.Px      42.60.Fc      78.67.Hc      81.15.Hi     
Received: 24 December 2009      Published: 09 March 2010
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Fc (Modulation, tuning, and mode locking)  
  78.67.Hc (Quantum dots)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/3/034209       OR      https://cpl.iphy.ac.cn/Y2010/V27/I3/034209
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JI Hai-Ming
YANG Tao
CAO Yu-Lian
XU Peng-Fei
GU Yong-Xian
LIU Yu
XIE Liang
WANG Zhan-Guo
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