| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111) |
| WU Rui1, WANG Li-Li1, ZHANG Yi1, MA Xu-Cun1, JIA Jin-Feng2, XUE Qi-Kun1,2 |
| 1Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Department of Physics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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WU Rui, WANG Li-Li, ZHANG Yi et al 2010 Chin. Phys. Lett. 27 026802 |
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Abstract Two Ge-induced incommensurate phases, γ and β, on Si(111) are observed and studied by {\it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si(111)-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si(111)-1×1 surface, respectively. In the β phase, two types of domain walls, ``zigzag'' and ``face-to-face'', form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.
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| Keywords:
68.37.Ef
68.35.Bg
81.15.Hi
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Received: 03 November 2009
Published: 08 February 2010
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| PACS: |
68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.35.bg
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(Semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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[1] M\"onch W 1993 Semiconductor Surfaces and Interfaces (Berlin: Springer)
[2] Zegenhagen J, Lyman P F, B\"{ohringer M and Bedzyk M J 1997 Phys. Status Solidi B 204 587
[3] Saranin A A, Kotlyar V G, Zotov A V, Kasyanova T V, Cherevik M A and Lifshits V G 2002 Surf. Sci. 517 151
[4] Narita H, Kimura A, Taniguchi M, Nakatake M, Xie T, Qiao S and Namatame H 2007 Phys. Rev. B 76 115405
[5] Yang W S and Jona F 1982 Solid State Commun. 42 49
[6] Zegenhagen J, Hybertsen M S, Freeland P E and Patel J R 1988 Phys. Rev. B 38 7885
[7] Lai M Y and Wang Y L 1999 Phys. Rev. B 60 1764
[8] Lai M Y and Wang Y L 2000 Phys. Rev. B 61 12608
[9] Artacho E, Molinas-Mata P, B\"{ohringer M, Zegenhagen J, Franklin G E and Patel J R 1995 Phys. Rev. B 51 9952
[10] B\"{ohringer M, Molinas-Mata P, Artacho E and Zegenhagen J 1995 Phys. Rev. B 51 9965
[11] Kraft J, Ramsey M G and Netzer F P 1997 Phys. Rev. B 55 5384
[12] Gai Z, Zhao R G, He Y, Ji H, Hu C and Yang W S 1996 Phys. Rev. B 53 1539
[13] Kawasaki T, An T, Ito H and Ichinokawa T 2001 Surf. Sci. 487 39
[14] B\"{ohringer M, Jiang Q, Berndt R, Schneider W D and Zegenhagen J 1996 Surf. Sci. 367 245
[15] Voigtl\"{ander B 2001 Surf. Sci. Rep. 43 127
[16] Wang Y L, Gao H J, Guo H M, Wang S and Pantelides S T 2005 Phys. Rev. Lett. 94 106101
[17] Qin Z H, Shi D X, Ma H F, Gao H J, Rao A S, Wang S and Pantelides S T 2007 Phys. Rev. B 75 085313
[18] Ansari Z A, Arai T and Tomitori M 2005 Surf. Sci. 574 L17
[19] Hwang I S, Ho M S and Tsong T T 1999 Phys. Rev. Lett. 83 120 |
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