| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Indium Ambient on Electrical Properties of Mg-Doped AlxGa1-xN |
| XU Zheng-Yu1, QIN Zhi-Xin1**, SANG Li-Wen1, ZHANG Yan-Zhao1, SHEN Bo1, ZHANG Guo-Yi1, ZHAO Lan2, ZHANG Xiang-Feng2, CHENG Cai-Jing2, SUN Wei-Guo2 |
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
2Luoyang Optoelectronic Institute, PO. Box 030, Luoyang 471009
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| Cite this article: |
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XU Zheng-Yu, QIN Zhi-Xin, SANG Li-Wen et al 2010 Chin. Phys. Lett. 27 127304 |
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Abstract Mg-doped AlxGa1−xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Al0.43Ga0.57N epilayer grown under indium (In) ambient is of the order of 104 Ω⋅cm, while the resistivity of Mg−doped Al0.43Ga0.57N grown without In assistance is of the order of 106 Ω⋅cm. The ultraviolet light−emitting diodes (UV-LEDs) using the In-assisted Mg-doped Al0.43Ga0.57N as the p−type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57N layers grown under In-ambient.
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| Keywords:
73.20.Hb
73.61.Ey
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Received: 02 April 2010
Published: 23 November 2010
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| PACS: |
73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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73.61.Ey
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(III-V semiconductors)
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[1] Nishida T, Saito H and Kobayashi N 2001 Appl. Phys. Lett. 79 711
[2] WalKer D, Zhang X, Saxler A, Kung P, Xu J and Razeghi M 1997 Appl. Phys. Lett. 70 949
[3] Nam K B, Nakarmi M L, Li J, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 83 878
[4] Nakarmi M L, Kim K H, Li J, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 82 3041
[5] Saxler A, Mitchel W C, Kung P and Razeghi M 1999 Appl. Phys. Lett. 74 2023
[6] Kozodoy P, Hansen M, DenBaars S P and Mishra U 1999 Appl. Phys. Lett. 74 3681
[7] Brandt O, Yang H, Kostial H and Ploog K H 1996 Appl. Phys. Lett. 69 2707
[8] Yamamoto T and Katayama-Yoshida H 1997 Jpn. J. Appl. Phys. Part 2 36 L180
[9] Kim K S, Yang G M and Lee H J 1999 Solid-State Electron. 43 1807
[10] Sang L W, Qin Z X, Fang H, Dai T, Yang Z J, Shen B, Zhang G Y, Zhang X P, Xu J and Yu D P 2008 Appl. Phys. Lett. 93 122104
[11] Katayama-Yoshida H, Nishimatsu T, Yamamoto T and Orita N 1998 Phys. Status Solidi B 210 429
[12] Katayama-Yoshida H, Nishimatsu T, Yamamoto T and Orita N 2001 J. Phys.: Condens. Matter 13 8901
[13] Adivarahan V, Simin G, Tamulaitis G, Srinivasan R, Yang J, Khan M A et al 2001 Appl. Phys. Lett. 79 1903
[14] Al tahtamouni T M, Sedhain A, Lin J Y and Jiang H X 2008 Appl. Phys. Lett. 92 092105
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