Chin. Phys. Lett.  2010, Vol. 27 Issue (1): 018101    DOI: 10.1088/0256-307X/27/1/018101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films
ZHOU Xiao-Fang1, ZHANG Hui1, LI Yong1, TANG Xiao-Dong2, CHEN Qing-Ming1, ZHANG Peng-Xiang1
1Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming 6500512Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241
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ZHOU Xiao-Fang, ZHANG Hui, LI Yong et al  2010 Chin. Phys. Lett. 27 018101
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Abstract Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.
Keywords: 81.05.Dz      73.43.Fj      73.50.-h     
Received: 05 June 2009      Published: 30 December 2009
PACS:  81.05.Dz (II-VI semiconductors)  
  73.43.Fj (Novel experimental methods; measurements)  
  73.50.-h (Electronic transport phenomena in thin films)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/1/018101       OR      https://cpl.iphy.ac.cn/Y2010/V27/I1/018101
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ZHOU Xiao-Fang
ZHANG Hui
LI Yong
TANG Xiao-Dong
CHEN Qing-Ming
ZHANG Peng-Xiang

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