| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier |
| LIAO Zhong-Wei1, GOU Hong-Yan1, HUANG Yue1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2 |
| 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH (Royal Institute of Technology), Electrum 229, SE-164 40 Kista, Sweden |
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| Cite this article: |
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LIAO Zhong-Wei, GOU Hong-Yan, HUANG Yue et al 2009 Chin. Phys. Lett. 26 087303 |
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Abstract An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9V for ±12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100μs program/erase at a low voltage of ±7V, which is due to fast charge injection rates, i.e., about 2.4×1016cm-2s-1 for electrons and 1.9×1016cm-2s-1 for holes.
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| Keywords:
73.40.Qv
73.61.-r
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Received: 12 March 2009
Published: 30 July 2009
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.-r
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(Electrical properties of specific thin films)
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