| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films |
| CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan |
| School of Microelectronics, Xidian University, Xi'an 710071Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 |
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| Cite this article: |
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CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men et al 2009 Chin. Phys. Lett. 26 086106 |
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Abstract Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemical vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000°C and the carbonized time of 5min. Under these optimized carbonization conditions, thick epitaxial films of about 15μm with good crystalline quality and low residual strain can be obtained.
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| Keywords:
61.82.Fk
81.15.Gh
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Received: 04 May 2009
Published: 30 July 2009
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| PACS: |
61.82.Fk
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(Semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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