Chin. Phys. Lett.  2009, Vol. 26 Issue (7): 077805    DOI: 10.1088/0256-307X/26/7/077805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Photoluminescence of a ZnO/GaN Heterostructure Interface
LIU Shu-Jian1, YU Qing-Xuan1,2, WANG Jian2, LIAO Yuan1, LI Xiao-Guang1
1Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 2300262State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083
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LIU Shu-Jian, YU Qing-Xuan, WANG Jian et al  2009 Chin. Phys. Lett. 26 077805
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Abstract Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence (PL) of the associated GaN layer shows that the donor-acceptor luminescence of GaN shifts to about 3.27eV, which is consistent with the electroluminescence (EL) of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the GaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/GaN p-n junctions.
Keywords: 78.55.Cr      68.35.Fx      71.55.Eq     
Received: 10 February 2009      Published: 02 July 2009
PACS:  78.55.Cr (III-V semiconductors)  
  68.35.Fx (Diffusion; interface formation)  
  71.55.Eq (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/7/077805       OR      https://cpl.iphy.ac.cn/Y2009/V26/I7/077805
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LIU Shu-Jian
YU Qing-Xuan
WANG Jian
LIAO Yuan
LI Xiao-Guang
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