Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO<SUB>3</SUB> Heterojunctions

doi:10.1088/0256-307X/26/7/077303

Chin. Phys. Lett.

2009, Vol. 26

Issue (7): 077303 DOI: 10.1088/0256-307X/26/7/077303

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO₃ Heterojunctions

ZHANG Hong-Jian, ZHANG Xiao-Ping, ZHAO Yong-Gang

Department of Physics and State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084

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ZHANG Hong-Jian, ZHANG Xiao-Ping, ZHAO Yong-Gang 2009 Chin. Phys. Lett. 26 077303

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Abstract An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO₃heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.

Keywords: 73.40.Lq 77.80.Fm 72.20.Jv

Received: 24 April 2009 Published: 02 July 2009

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	77.80.Fm	(Switching phenomena)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/7/077303 OR https://cpl.iphy.ac.cn/Y2009/V26/I7/077303

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