| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Field-Effect Transistor Based on Si with LaAlO3-δ as the Source and Drain |
| YANG Fang, JIN Kui-Juan, LU Hui-Bin, HE Meng, YANG Guo-Zhen |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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YANG Fang, JIN Kui-Juan, LU Hui-Bin et al 2009 Chin. Phys. Lett. 26 077301 |
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Abstract N-type LaAlO3-δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAlO3-δ as the source and drain, p-type Si as the semiconducting channel, and SiO2 as the gate insulator, respectively. The typical current-voltage behavior with field-effect transistor characteristic is observed. The ON/OFF ratio reaches 14at a gate voltage of 10V, the field-effect mobility is 10cm2/V・s at a gate voltage of 2V, and the transconductance is 5×10-6 A/V at a drain-source voltage of 0.8V at room temperature. The present field-effect transistor device demonstrates the possibility of realizing the integration of multifunctional perovskite oxides and the conventional Si semiconductor.
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| Keywords:
73.40.Lq
73.40.Qv
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Received: 08 February 2009
Published: 02 July 2009
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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