| ATOMIC AND MOLECULAR PHYSICS |
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Simulation of Chromium Atom Deposition Pattern in a Gaussain Laser Standing Wave with Different Laser Power |
| ZHANG Wen-Tao, ZHU Bao-Hua |
| Department of Electronic Engineering, Guilin University of Electronic Technology, Guilin 541004 |
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| Cite this article: |
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ZHANG Wen-Tao, ZHU Bao-Hua 2009 Chin. Phys. Lett. 26 073201 |
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Abstract One-dimensional deposition of a neutral chromium atomic beam focused by a near-resonant Gaussian standing-laser field is discussed by using a fourth-order Runge-Kutta type algorithm. The deposition pattern of neutral chromium atoms in a laser standing wave with different laser power is discussed and the simulation result shows that the full width at half maximum (FWHM) of a nanometer stripe is 115nm and the contrast is 2.5:1 with laser power 3.93mW; the FWHM is 0.8nm and the contrast is 27:1 with laser power 16mW, the optimal laser power; but with laser power increasing to 50mW, the nanometer structure forms multi-crests and the quality worsens quickly with increasing laser power.
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| Keywords:
32.80.Pj
42.50.Vk
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Received: 01 January 2009
Published: 02 July 2009
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[1] McClelland J J, Shannon B H and Marin P 2004 Sci.Technol. Adv. Mater. 5 575
[2] Celotta R J, Gupta R and Scholten R E 1996 J. Appl.Phys. 79 6079
[3] William D P 1998 Rev. Mod. Phys. 70 721
[4] Lison F, Adams H J and Haubrich D 1997 Appl. Phys. 65 419
[5] Drodofsky U, Stuhler J and Brezger B 1997 Microelectron. Engin. 35 285
[6] Bell A S, Pfau T and Drodofsky U 1998 Microelectron.Engin. 41 587
[7] Drodofsky U, Drewsen M and Pfau T 1996 Microelectron.Engin. 30 383
[8] Mutzel M, Rasbach U and Meschede D 2003 Appl. Phys.B 77 1
[9] Scholten R E, McClelland J J and Palm E C 1994 J.Vac. Sci. Technol. B 12 1847
[10] Drodofsky U, Stuhler J and Brezger B 1997 Microelectron. Engin. 35 285 |
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