| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates |
| ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu, SUN Jing-Chang, BIAN Ji-Ming, LIANG Hong-Wei, HUO Bing-Zhi, YU Dong-Qi, CHEN Xi, FU Qiang |
| School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 |
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| Cite this article: |
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ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu et al 2009 Chin. Phys. Lett. 26 057305 |
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Abstract Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350°C, 450°C, 550°C and 650°C, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650°C in oxygen with a pressure of 1×105 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350°C to 550°C. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350°C and 450°C show a strong acceptor-bound exciton (A0X) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350°C and 450°C exhibit p-type conductivity. The p-type ZnO:P film deposited at 450°C shows a resistivity of 1.846Ω・cm and a relatively high hole concentration of 5.100×1017 cm-3 at room temperature.
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| Keywords:
73.90.+f
78.55.Et
81.15.Fg
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Received: 25 August 2008
Published: 23 April 2009
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| PACS: |
73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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78.55.Et
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(II-VI semiconductors)
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81.15.Fg
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(Pulsed laser ablation deposition)
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