| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Hole Spin Relaxation in an Ultrathin InAs Monolayer |
| LI Tao, ZHU Yong-Gang, ZHANG Xin-Hui, MA Shan-Shan, WANG Peng-Fei, NIU Zhi-Chuan |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
LI Tao, ZHU Yong-Gang, ZHANG Xin-Hui et al 2009 Chin. Phys. Lett. 26 057303 |
|
|
|
|
Abstract We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (τ1h= 196±17ps) that is in the magnitude similar to electrons (τ1e=354±32ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.
|
| Keywords:
71.55.Eq
72.25.Rb
78.47.+p
|
|
|
Received: 06 February 2009
Published: 23 April 2009
|
|
|
|
|
|
|
|
[1] Awschalom D D, Loss D and Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin:Springer)
[2] Ohno Y, Terauchi R, Adachi T, Matsukura F and Ohno H 1999 Phys. Rev. Lett. 83 4196
[3] Kikkawa M J and Awschalom D D 1998 Phys. Rev. Lett. 80 4313
[4] Gotoh H, Ando H, Kamada H, Chavez-Pirson A and Temmyo J1998 Appl. Phys. Lett. 72 1341
[5] Gupta A J, Awschalom D D, Peng X and Alivisatos P A 1999 Phys. Rev. B 59 R10421
[6] Paillard M, Marie X, Renucci P, Amand T, Jbeli A andGerard M J 2001 Phys. Rev. Lett. 86 1634
[7] Stievater H T, Li X, Cubel T, Steel G D, Gammon D, KatzerS D and Park D 2002 Appl. Phys. Lett. 81 4251
[8] Gundogdu K, Hall C K, Boggess F T, Deppe G D and ShchekinB O 2004 Appl. Phys. Lett. 84 2793
[9] Gundogdu K, Hall C K, Koerperick J E, Pryor E C, Flatte EM, Boggess F T, Shchekin B O and Deppe G D 2005 Appl. Phys.Lett. 86 113111
[10] Braun F P, Marie X, Lombez L, Urbaszek B, Amand T,Renuccl P, Kalevich K V, Kavokin V K, Krebs O, Voisin P and MasumotoY 2005 Phys. Rev. Lett. 94 116601
[11] Tsitsishvili E, Baltz V R and Kalt H 2005 Phys.Rev. B 72 155333
[12] Khaetskii V A and Nazarov V Y 2000 Phys. Rev. B 61 12639
[13] Zuti\'c I, Fabian J and Sarma D S 2004 Rev. Mod.Phys. 76 323
[14] Lu C, Cheng J L and Wu M W 2005 Phys. Rev. B 71 175308
[15] Bulaev V D and Loss D 2005 Phys. Rev. Lett. 95 076805
[16] Hall C K, Koerperick J E, Boggess F T, Shchekin B O andDeppe G D 2007 Appl. Phys. Lett. 90 053109
[17] Burkard G and Mater N 2008 Virtual J. Nanoscale Sci.Technol. 7 100
[18] Marzin Y J, G\'{erard M J, Izra\"{el A, Barrier D andBastard G 1994 Phys. Rev. Lett. 73 716
[19] Alonso I M, Ilg M, Ploog K and Trampert A 1995 J.Appl. Phys. 78 1980
[20] Amand T, Dareys B, Baylac B, Marie X, Barrau J, BrousseauM, Dunstan J D and Planel R 1994 Phys. Rev. B 50 11624
[21] Sun Z, Xu Z Y, Ruan X Z, Ji Y, Sun B Q, Wang M and Ni H Q2007 Solid. Stat. Comm. 143 158
[22] Damen C T, Vina L, Cunningham E J, Shah J and Sham J L1991 Phys. Rev. Lett. 67 3432
[23] Ostatnicky T, Cregut O, Gallart M, Gilliot P, Honerlage Band Likforman P J 2007 Phys. Rev. B 75 165311
[24] Tsitsishvili E, Baltz V R and Kalt H 2005 Phys.Rev. B 72 155333 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
