| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication and Frequency Response Characteristics of AlN-Based Solidly Mounted Resonator |
| XIONG Juan, GU Hao-Shuang, HU Kuan, HU Ming-Zhe |
| Department of Physics and Electronic Technology, Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062 |
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| Cite this article: |
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XIONG Juan, GU Hao-Shuang, HU Kuan et al 2009 Chin. Phys. Lett. 26 048104 |
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Abstract Film bulk acoustic resonator (FBAR) with solidly mounted resonator (SMR)-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy (AFM) analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53GHz, with their quality factors 134.2 and 97.6, respectively.
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| Keywords:
81.15.-z
81.10.Aj
85.80.+k
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Received: 25 December 2008
Published: 25 March 2009
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| PACS: |
81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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85.80.+k
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