Chin. Phys. Lett.  2009, Vol. 26 Issue (4): 048103    DOI: 10.1088/0256-307X/26/4/048103
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness
YANG Hong-Bin, ZHANG Xiang-Jiu
Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433
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YANG Hong-Bin, ZHANG Xiang-Jiu 2009 Chin. Phys. Lett. 26 048103
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Abstract By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.
Keywords: 81.15.Hi      61.72.Ff      78.30.Er     
Received: 13 November 2008      Published: 25 March 2009
PACS:  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))  
  78.30.Er (Solid metals and alloys ?)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/4/048103       OR      https://cpl.iphy.ac.cn/Y2009/V26/I4/048103
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YANG Hong-Bin
ZHANG Xiang-Jiu
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