Chin. Phys. Lett.  2009, Vol. 26 Issue (4): 048102    DOI: 10.1088/0256-307X/26/4/048102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
HPHT Synthesis of Different Shape Coarse-Grain Diamond Single Crystals
ZHOU Sheng-Guo1, ZANG Chuan-Yi1, MA Hong-An2, HU Qiang1, LI Xiao-Lei1, LI Shang-Sheng2, ZHANG He-Min1, JIA Xiao-Peng1,2
1Institute of Material Science and Engineering Henan Polytechnic University, Jiaozuo 4540002National Laboratory of Super Hard Materials, Jilin University,Changchun 130012
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ZHOU Sheng-Guo, ZANG Chuan-Yi, MA Hong-An et al  2009 Chin. Phys. Lett. 26 048102
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Abstract Synthesis of coarse-grain diamond crystals is studied in a China-type SPD6×1670T cubic high-pressure apparatus with high exact control system. To
synthesize high quality coarse-grain diamond crystals, advanced indirect heat assembly, powder catalyst technology and optimized synthesis craft are used. At last, three kinds of coarse-grain diamond (about 0.85mm) single crystals with hexahedron, hex-octahedron and octahedron are synthesized successfully under HPHT (about 5.4GPa, 1300-1450°). The growth characters
of different shape crystals are discussed. The results and techniques might be useful for the production of coarse-grain diamonds.
Keywords: 81.05.Uw      81.10.Aj      81.10.-h     
Received: 13 October 2008      Published: 25 March 2009
PACS:  81.05.Uw  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/4/048102       OR      https://cpl.iphy.ac.cn/Y2009/V26/I4/048102
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Articles by authors
ZHOU Sheng-Guo
ZANG Chuan-Yi
MA Hong-An
HU Qiang
LI Xiao-Lei
LI Shang-Sheng
ZHANG He-Min
JIA Xiao-Peng
[1] Davies G, Walker P L Jr and Thrower P A 1977 Chemistry and Physics of Carbon (New York: Dekker) vol 1 p 51
[2] Wentorf R H Jr 1971 J. Phys. Chem. 75 1833
[3] Strong H M and Chrenko R M 1971 J. Phys. Chem. 75 1838
[4] Li Z H, Liu J C and Yi Y L 2006 Diamond AbrasivesEngin. 11 7
[5] Zhao B, Li Z H and Yi Y L 2006 Diamond AbrasivesEngin. 2 77
[6] Bundy F P, Hall H T, Strong H M et al 1955 Nature 176 51
[7] Horton M D and Peterson G R 1980 Proc. Tech. Sym.Diamonds (Piscataway, NJ: Industrial Diamond Association ofAmerica) p 171
[8] Wentorf R H Jr 1965 Adv. Chem. Phys. 9 365
[9] Bovenkerk H E 1961 Proceedings of an InternationalConference (New York 1960) (New York: Wiley) p 58
[10] Sung J C, Sung M and Sung E 2006 Thin Solid Films 498 212
[11] Wentorf R H 1971 J. Phys. Chem. 75 1833
[12] Burns R C, Saito S, Fukunaga O and Yoshikawa M 1990 Science and Technology of New Diamond (Tokyo: KTKScientific/Terra Scientific) p 197
[13] Burns R C, Hansen J O, Spits R A, Sibanda M, Welbourn C Mand Welch D L 1999 Diamond Relat. Mater. 8 1433
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