| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films |
| ZHANG Yin-Zhu1, LU Jian-Guo1, YE Zhi-Zhen1, HE Hai-Ping1, CHEN Lan-Lan2, ZHAO Bing-Hui1 |
| 1State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 3100272School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 |
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| Cite this article: |
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ZHANG Yin-Zhu, LU Jian-Guo, YE Zhi-Zhen et al 2009 Chin. Phys. Lett. 26 046103 |
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Abstract Li-N dual-doped p-type ZnO (ZnO:(Li,N)) thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The LiZn-NO complex acceptor with an energy level of 138meV is identified from the free-to-neutral-acceptor (e, A0) emission. The Haynes factor is about 0.087 for the LiZn-NO complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248meV, also identified from the (e, A0) emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO:(Li,N).
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| Keywords:
61.72.Vv
73.61.Ga
81.15.Fg
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Received: 03 October 2008
Published: 25 March 2009
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[1] Tang Z K et al 1998 Appl. Phys. Lett. 72 3270
[2] Lu J G et al 2006 J. Appl. Phys. 100 073714
[3] Zhang S B, Wei S H and Zunger A 2001 Phys. Rev. B 63 075205
[4] Look D C et al 2002 Appl. Phys. Lett. 81 1830
[5] Zuener A et al 2002 Phys. Stat. Sol. B 234 R7
[6] Lu J G et al 2003 Mater. Lett. 57 3311
[7] Kim K K et al 2003 Appl. Phys. Lett. 83 63
[8] Ryu Y R, Lee T S and White H W 2003 Appl. Phys.Lett. 83 87
[9] Xiu F X et al 2005 Appl. Phys. Lett. 87 152101
[10] Zeng Y J et al 2006 Appl. Phys. Lett. 89042106
[11] Zhang Y Z et al 2006 Appl. Surf. Sci. 2541993
[12] Lu J G et al 2006 Appl. Phys. Lett. 88 222114
[13] Wang X H et al 2006 J. Phys. D: Appl. Phys. 39 4568
[14] Krtschil A et al 2005 Appl. Phys. Lett. 87262105
[15] Park C H, Zhang S B and Wei S H 2002 Phys. Rev. B 66 073202
[16] Lin B, Fu Z and Jia Y 2001 Appl. Phys. Lett. 79 943
[17] Oh M S, Kim S H and Seong T Y 2005 Appl. Phys.Lett. 87 122103
[18] Wang L and Giles N 2003 J. Appl. Phys. 94973
[19] Kohan A F et al 2000 Phys. Rev. B 61 15019
[20] Jeong S H, Kim B S and Lee B T 2003 Appl. Phys.Lett. 82 2625
[21] Zeng Y J et al 2006 Appl. Phys. Lett. 88262103
[22] Lee W J, Kang J and Chang K J 2006 Phys. Rev. B 73 024117
[23] Zeng Y J et al 2007 J. Phys. D: Appl. Phys. 40 1807 |
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