High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

doi:10.1088/0256-307X/26/4/046102

Chin. Phys. Lett.

2009, Vol. 26

Issue (4): 046102 DOI: 10.1088/0256-307X/26/4/046102

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

MAO Ping, ZHANG Zhi-Gang, PAN Li-Yang, XU Jun, CHEN Pei-Yi

Institute of Microelectronics, Tsinghua University, Beijing 100084Tsinghua National Laboratory of Information Science and Technology, Beijing 100084

Cite this article:

MAO Ping, ZHANG Zhi-Gang, PAN Li-Yang et al 2009 Chin. Phys. Lett. 26 046102

Download: PDF(579KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3×10¹²cm^-2), small size (2-4nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2V is obtained with stacked Ru NCs in comparison to that of 3.5V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs.

Keywords: 61.46.Hk 81.07.Bc 73.40.Qv

Received: 26 November 2008 Published: 25 March 2009

PACS:	61.46.Hk	(Nanocrystals)
	81.07.Bc	(Nanocrystalline materials)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

TRENDMD:

URL:

https://cpl.iphy.ac.cn/10.1088/0256-307X/26/4/046102 OR https://cpl.iphy.ac.cn/Y2009/V26/I4/046102

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	MAO Ping
	ZHANG Zhi-Gang
	PAN Li-Yang
	XU Jun
	CHEN Pei-Yi

[1] Tiwari S et al 1996 Appl. Phys. Lett. 68 1377
[2] Hanafi H I, Tiwari S and Khan I 1996 IEEE Trans.Electron Devices 43 1553
[3] Shi Y et al 1998 J. Appl. Phys. 84 2358
[4] Wan Q et al 2003 Appl. Phys. Lett. 82 4708
[5] Liu Z T et al 2002 IEEE Trans. Electron Devices 49 1606
[6] Dufourcq J et al 2008 Appl. Phys. Lett. 92073102
[7] Samanta S K et al 2005 Appl. Phys. Lett. 87113110
[8] Yang F M et al 2007 Appl. Phys. Lett. 90212108
[9] Ohba R et al 2002 IEEE Trans. Electron Devices 49 1392
[10] Lee C et al 2003 Tech. Dig. Int. Electron. DevicesMeet. 557
[11] Zhong H, Heuss G and Misra V 2000 IEEE ElectronDevice Lett. 21 593
[12] Zhang M et al 2007 J. Vac. Sci. Technol. A 25775
[13] Farmer D B and Gordon R G 2007 J. Appl. Phys. 101 124503
[14] Ping Mao et al 2008 Appl. Phys. Lett. 93242102
[15] Wang S Q et al 1995 J. Appl. Phys. 77 5751
[16] Chen Z Q et al 2004 Phys. Status Solidi B 2412253

Related articles from Frontiers Journals

[1]	HUANG Xiao-Ming, WU Chen-Fei, LU Hai, XU Qing-Yu, ZHANG Rong, ZHENG You-Dou. Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(6): 046102
[2]	KONG Yue-Chan,XUE Fang-Shi,ZHOU Jian-Jun,LI Liang,CHEN Chen,JIANG Wen-Hai. A Substitution for the High-k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure**[J]. Chin. Phys. Lett., 2012, 29(5): 046102
[3]	XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang. The Impact of HCl Precleaning and Sulfur Passivation on the Al₂O₃/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors**[J]. Chin. Phys. Lett., 2012, 29(4): 046102
[4]	ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. Chin. Phys. Lett., 2012, 29(3): 046102
[5]	LI Ping-Yun, ZHANG Xi-Yan, NI Hai-Tao, CAO Zhen-Hua, MENG Xiang-Kang. Deformation Induced Internal Friction Peaks in Nanocrystalline Nickel[J]. Chin. Phys. Lett., 2012, 29(2): 046102
[6]	LI Qi, WANG Wei-Dong, LIU Yun, WEI Xue-Ming. Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor[J]. Chin. Phys. Lett., 2012, 29(2): 046102
[7]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 046102
[8]	YANG Yan-Ning, ZHANG Zhi-Yong, ZHANG Fu-Chun, DONG Jun-Tang, ZHAO Wu, ZHAI Chun-Xue, ZHANG Wei-Hu. The Field Emission Characteristics of Titanium-Doped Nano-Diamonds**[J]. Chin. Phys. Lett., 2012, 29(1): 046102
[9]	LI Ping-Yun, CAO Zhen-Hua, JIANG Zhong-Hao, MENG Xiang-Kang . FMAA-MS Investigation into Ni₆₈Fe₃₂ Nanoalloy with Sample Length Less than 30mm**[J]. Chin. Phys. Lett., 2011, 28(8): 046102
[10]	GUO Jing-Wei, HUANG Hui, REN Xiao-Min, YAN Xin, CAI Shi-Wei, GUO Xin, HUANG Yong-Qing, WANG Qi, ZHANG Xia, WANG Wei . Growth of Zinc Blende GaAs/AlGaAs Radial Heterostructure Nanowires by a Two-Temperature Process**[J]. Chin. Phys. Lett., 2011, 28(3): 046102
[11]	GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan, XIE Er-Qing . A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(2): 046102
[12]	GUO Xiao-Song, ZHANG Shan-Shan, BAO Zhong, ZHANG Hong-Liang, CHEN Chang-Cheng, LIU Li-Xin, LIU Yan-Xia, XIE Er-Qing . Effect of Substrate Temperature on the Structural, Electrical and Optical Properties of Nanocrystalline Silicon Films in Hot-Filament Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(2): 046102
[13]	Murtaza Saleem, Saadat A. Siddiqi, Shahid Atiq, M. Sabieh Anwar . Structural and Magnetic Studies of Zn_0.95Co_0.05O and Zn_0.90Co_0.05Al_0.05O**[J]. Chin. Phys. Lett., 2011, 28(11): 046102
[14]	ZHOU Bin, WANG Jin-Yan, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator**[J]. Chin. Phys. Lett., 2011, 28(10): 046102
[15]	JI Xiao-Li, LIAO Yi-Ming, YAN Feng, SHI Yi, ZHANG Guan, GUO Qiang . Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability**[J]. Chin. Phys. Lett., 2011, 28(10): 046102

Viewed

Full text

Abstract