Chin. Phys. Lett.  2009, Vol. 26 Issue (3): 038103    DOI: 10.1088/0256-307X/26/3/038103
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition
CUI Xu-Gao, ZHANG Rong, TAO Zhi-Kuo, LI Xin, XIU Xiang-Qian, XIE Zi-Li, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
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CUI Xu-Gao, ZHANG Rong, TAO Zhi-Kuo et al  2009 Chin. Phys. Lett. 26 038103
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Abstract Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
Keywords: 81.15.Gh      81.05.Ea     
Received: 10 September 2008      Published: 19 February 2009
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.05.Ea (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/3/038103       OR      https://cpl.iphy.ac.cn/Y2009/V26/I3/038103
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CUI Xu-Gao
ZHANG Rong
TAO Zhi-Kuo
LI Xin
XIU Xiang-Qian
XIE Zi-Li
ZHENG You-Dou
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