| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method |
| SU Xin-Yan, HAN Yan, WANG Jian, YAO Jin-Jie |
| National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051 |
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| Cite this article: |
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SU Xin-Yan, HAN Yan, WANG Jian et al 2009 Chin. Phys. Lett. 26 037104 |
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Abstract Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
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| Keywords:
71.10.Ay
71.10.Li
71.15.Nc
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Received: 11 November 2008
Published: 19 February 2009
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| PACS: |
71.10.Ay
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(Fermi-liquid theory and other phenomenological models)
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71.10.Li
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(Excited states and pairing interactions in model systems)
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71.15.Nc
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(Total energy and cohesive energy calculations)
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