| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy |
TANG Bao, XU Ying-Qiang, ZHOU Zhi-Qiang, HAO Rui-Ting, WANG Guo-Wei,
REN Zheng-Wei, NIU Zhi-Chuan |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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TANG Bao, XU Ying-Qiang, ZHOU Zhi-Qiang et al 2009 Chin. Phys. Lett. 26 028102 |
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Abstract InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800μm2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25μ,m at 300K, the peak detectivities of the detectors are 4×109cm・Hz1/2/W at 77K and 2×108cm・Hz1/2/W at 300K, respectively
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| Keywords:
81.05.Ea
81.15.Hi
78.67.Pt
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Received: 13 November 2008
Published: 20 January 2009
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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