Chin. Phys. Lett.  2009, Vol. 26 Issue (2): 026803    DOI: 10.1088/0256-307X/26/2/026803
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser
HUANG Wei-Qi1, LÜ Quan1, XU Li2, ZHANG Rong-Tao1, WANG Hai-Xu1, JIN Feng1
1Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 5500252Department of Physics, Datong University, Datong 730013
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HUANG Wei-Qi, LÜ, Quan et al  2009 Chin. Phys. Lett. 26 026803
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Abstract We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser
irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL
emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
Keywords: 68.35.-p      61.43.Bn     
Received: 14 October 2008      Published: 20 January 2009
PACS:  68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics)  
  61.43.Bn (Structural modeling: serial-addition models, computer simulation)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/2/026803       OR      https://cpl.iphy.ac.cn/Y2009/V26/I2/026803
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HUANG Wei-Qi
Quan
XU Li
ZHANG Rong-Tao
WANG Hai-Xu
JIN Feng
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