Chin. Phys. Lett.  2009, Vol. 26 Issue (2): 024203    DOI: 10.1088/0256-307X/26/2/024203
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
SUN Hua-Jun1, HOU Li-Song1, WU Yi-Qun1, TANG Xiao-Dong2
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241
Cite this article:   
SUN Hua-Jun, HOU Li-Song, WU Yi-Qun et al  2009 Chin. Phys. Lett. 26 024203
Download: PDF(300KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.
Keywords: 42.79.Vb      84.37.+q      61.43.Dq     
Received: 04 June 2008      Published: 20 January 2009
PACS:  42.79.Vb (Optical storage systems, optical disks)  
  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/26/2/024203       OR      https://cpl.iphy.ac.cn/Y2009/V26/I2/024203
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
SUN Hua-Jun
HOU Li-Song
WU Yi-Qun
TANG Xiao-Dong
[1] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[2] Evans E J, Helbers J H and Ovshinsky S R 1970 J.Non-Cryst. Solids 2 334
[3] Ovshinsky S R and Fritzsche H 1971 Metall. Trans. 2 641
[4] Ohta.T 2001 J. Optoelectron. Adv. Mater. 3 609
[5] Kolobov A V 1991 J. Non-Cryst. Solids 38 710
[6] Nonaka, Ohbayashi T and Toriumi G 2000 Thin SolidFilms 370 258
[7] Yamada N and Matsunaga T 2000 Jpn. J. Appl. Phys. 88 7020
[8] Wuttig M and Steimer C 2007 Appl. Phys. A 87411
[9] Pirovano A, Lacaita A L and Benvenuti A 2004 IEEETrans. Electron. Dev. 51 452
[10] Lankhorst M, Ketelaars B and Wolters R 2005 NatureMater. 4 347
[11] Wuttig M 2005 Nature Mater. 4 265
[12] Kolobov A, Fons P and Frenkel A 2004 Nature Mater. 3 703
[13] Welnic W, Pamungkas A and Detemple R 2006 NatureMater. 5 56
[14] Hirose Y and Hirose H 1976 J. Appl. Phys. 472767
[15] Terabe K, Nakayama T and Hasegawa T 2005 Nature 433 47
[16] Kozicki M N, Mitkova M and Park M 2003 SuperlatticesMicrostruct. 34 459
[17] Kozicki M N, Park M and Mitkova M, 2005 IEEE Trans.Nanotechnol. 4 331
[18] Kim C J and Yoon S G 2006 J. Vac. Sci. Technol. B 24 721
[19] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys.Part 1 45 4951
[20] Pandian R, Kooi B J and Palasantzas G 2007 Appl.Phys. Lett. 91 152103
[21] Sun H J, Hou L S, Wu Y Q 2008 Chin. Phys. Lett. 25 2915
[22] Lucovsky G, James C and Phillips 2008 J. Non-Cryst.Solids 354 2753
Related articles from Frontiers Journals
[1] MA Zhi, CAO Chen-Tao, LIU Qing-Fang, WANG Jian-Bo. A New Method to Calculate the Degree of Electromagnetic Impedance Matching in One-Layer Microwave Absorbers[J]. Chin. Phys. Lett., 2012, 29(3): 024203
[2] WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 024203
[3] WANG Li-Na, HU Li-Zhong, ZHANG He-Qiu, **, QIU Yu, LANG Ye, LIU Guo-Qiang, QU Guang-Wei, JI Jiu-Yu, MA Jin-Xue,. Effect of Substrate Temperature on the Structural and Raman Properties of Ag-Doped ZnO Films[J]. Chin. Phys. Lett., 2012, 29(1): 024203
[4] SUN Bao-Ru, ZHAN Zai-Ji**, LIANG Bo, ZHANG Rui-Jun, WANG Wen-Kui . Light Emission and Dynamic Failure Mechanism of Hypervelocity Impact on Zr-Ti-Ni-Cu-Be Bulk Metallic Glass[J]. Chin. Phys. Lett., 2011, 28(9): 024203
[5] LI Bi-Xin, CHEN Jiang-Shan, ZHAO Yong-Biao, MA Dong-Ge** . Frequency-Dependent Electrical Transport Properties of 4,4',4[J]. Chin. Phys. Lett., 2011, 28(5): 024203
[6] LIU Long-Fei**, CAI Zhi-Peng, LI Hui-Qiang, ZHANG Guang-Ye, GUO Shi-Bo . Critical Free Volume Concentration of Shear Banding Instability in Metallic Glasses[J]. Chin. Phys. Lett., 2011, 28(3): 024203
[7] ZONG Hai-Tao, MA Ming-Zhen, ZHANG Xin-Yu, QI Li, LI Gong, JING Qin, LIU Ri-Ping** . Formation and Compression Behavior of Two-Phase Bulk Metallic Glasses with a Minor Addition of Aluminum[J]. Chin. Phys. Lett., 2011, 28(3): 024203
[8] SHAO Yong-Bo**, ZHAO Ling-Juan, YU Hong-Yan, QIU Ji-Fang, QIU Ying-Ping, PAN Jiao-Qing, WANG Bao-Jun, ZHU Hong-Liang, WANG Wei . An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth[J]. Chin. Phys. Lett., 2011, 28(11): 024203
[9] LI Yang, QIU Sheng-Bao, SHAO Yang, YAO Ke-Fu** . Effects of the Cooling Rate on the Plasticity of Pd40.5Ni40.5P19 Bulk Metallic Glasses[J]. Chin. Phys. Lett., 2011, 28(11): 024203
[10] FU Di, XIE Dan, ZHANG Chen-Hui, ZHANG Di, NIU Jie-Bin, QIAN He, LIU Li-Tian,. Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications[J]. Chin. Phys. Lett., 2010, 27(9): 024203
[11] Abderrezak Bouchareb, Badis Bendjemil, , Rafael Piccin, Marcello Baricco. Influence of Rare-Earth Substitution for Iron in FeCrMoCB Bulk Metallic Glasses[J]. Chin. Phys. Lett., 2010, 27(7): 024203
[12] QU Wei, YE Hong-An,. A Novel Micro-Displacement Measuring Method Based on Optical Path Modulation[J]. Chin. Phys. Lett., 2010, 27(7): 024203
[13] LI Zhong-Liang, WU Zhao-Xin, JIAO Bo, MAO Gui-Lin, HOU Xun. Capacitance of Organic Schottky Diodes Based on Copper Phthalocyanine (CuPc)[J]. Chin. Phys. Lett., 2010, 27(6): 024203
[14] LV Shi-Long, SONG Zhi-Tang, LIU Yan, FENG Song-Lin. Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory[J]. Chin. Phys. Lett., 2010, 27(2): 024203
[15] WANG Zhi-Xin, LU Jin-Bin, YANG Wei-Tie. Formability and Thermal Stability of Ce62Al15Fe8Co15 Bulk Metallic Glass[J]. Chin. Phys. Lett., 2010, 27(2): 024203
Viewed
Full text


Abstract