| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Grain Boundary Barrier in ZnO/Si Heterostructure |
| LIU Bing-Ce, LIU Ci-Hui, FU Zhu-Xi, Yi Bo |
| Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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LIU Bing-Ce, LIU Ci-Hui, FU Zhu-Xi et al 2009 Chin. Phys. Lett. 26 117101 |
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Abstract The influence of ZnO microstructure on electrical barriers is investigated using capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) measurements. A deep level center located at EC-0.24eV obtained by DLTS in the ZnO films is an intrinsic defect related to Zni. The surface states in the ZnO grains that have acceptor behavior of capturing electrons from Zni defects result in the formation of grain barriers. In addition, we find that the current transport is dominated by grain barriers after annealing at 600°C at O2 ambient. With the increment of the annealing temperature, the current transport mechanism of ZnO/Si heterostructure is mainly dominated by thermo-emission.
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| Keywords:
71.55.Gs
71.55.-i
73.40.Lq
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Received: 08 April 2009
Published: 30 October 2009
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| PACS: |
71.55.Gs
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(II-VI semiconductors)
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71.55.-i
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(Impurity and defect levels)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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