| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate |
| LIU Xu-Yan1,2, LIU Wei-Li1, MA Xiao-Bo1,2, CHEN Chao1,2, SONG Zhi-Tang1, LIN Cheng-Lu1 |
| 1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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LIU Xu-Yan, LIU Wei-Li, MA Xiao-Bo et al 2009 Chin. Phys. Lett. 26 116802 |
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Abstract Ultra-thin and near-fully relaxed SiGe substrate is fabricated using a modified Ge condensation technique, and then a 25-nm-thick biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGe-on-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiGe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra,
and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000°C. According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones.
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| Keywords:
68.55.Ag
81.15.-z
68.37.Lp
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Received: 23 October 2008
Published: 30 October 2009
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| PACS: |
68.55.ag
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(Semiconductors)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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