Chin. Phys. Lett.  2009, Vol. 26 Issue (10): 108101    DOI: 10.1088/0256-307X/26/10/108101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling
WANG Kun1,2, DING Zhi-Bo1, LI Lin1, YAO Shu-De1
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712Division of Metrology in Ionizing Radiation and Medicine, National Institute of Metrology, Beijing 100013
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WANG Kun, DING Zhi-Bo, LI Lin et al  2009 Chin. Phys. Lett. 26 108101
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Abstract Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.9O/ZnO heterostructure grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.9O layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with χmin =5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal <12-13> axis in the {101-0} plane of both ZnO and MgZnO layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of eT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.
Keywords: 81.05.Dz      82.80.Yc      07.10.Pz     
Received: 07 April 2009      Published: 27 September 2009
PACS:  81.05.Dz (II-VI semiconductors)  
  82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)  
  07.10.Pz (Instruments for strain, force, and torque)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/10/108101       OR      https://cpl.iphy.ac.cn/Y2009/V26/I10/108101
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WANG Kun
DING Zhi-Bo
LI Lin
YAO Shu-De
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