Chin. Phys. Lett.  2009, Vol. 26 Issue (10): 107801    DOI: 10.1088/0256-307X/26/10/107801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song et al  2009 Chin. Phys. Lett. 26 107801
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Abstract We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
Keywords: 78.66.Fd      81.05.Ea      81.15.Hi     
Received: 02 March 2009      Published: 27 September 2009
PACS:  78.66.Fd (III-V semiconductors)  
  81.05.Ea (III-V semiconductors)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/10/107801       OR      https://cpl.iphy.ac.cn/Y2009/V26/I10/107801
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WANG Hai-Li
XIONG Yong-Hua
HUANG She-Song
NI Hai-Qiao
HE Zhen-Hong
DOU Xiu-Ming
NIU Zhi-Chuan
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