Chin. Phys. Lett.  2009, Vol. 26 Issue (1): 018101    DOI: 10.1088/0256-307X/26/1/018101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
ZHOU Zhi-Qiang, XU Ying-Qiang, HAO Rui-Ting, TANG Bao, REN Zheng-Wei, NIU Zhi-Chuan
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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ZHOU Zhi-Qiang, XU Ying-Qiang, HAO Rui-Ting et al  2009 Chin. Phys. Lett. 26 018101
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Abstract

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450°C and 2.1nm, respectively. A rms surface roughness of 0.67nm over 10×10μm2 is achieved as a 0.5μm GaSb film is grown under optimized conditions.

Keywords: 81.05.Ea      81.15.Hi      74.78.Fk     
Received: 22 September 2008      Published: 24 December 2008
PACS:  81.05.Ea (III-V semiconductors)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  74.78.Fk (Multilayers, superlattices, heterostructures)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/1/018101       OR      https://cpl.iphy.ac.cn/Y2009/V26/I1/018101
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ZHOU Zhi-Qiang
XU Ying-Qiang
HAO Rui-Ting
TANG Bao
REN Zheng-Wei
NIU Zhi-Chuan
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