| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well |
| LIANG Zhi-Mei, JIN Can, JIN Peng, WU Ju, WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LIANG Zhi-Mei, JIN Can, JIN Peng et al 2009 Chin. Phys. Lett. 26 017802 |
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Abstract Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.
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| Keywords:
78.67.Hc
78.20.Jq
81.07.Ta
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Received: 03 June 2008
Published: 24 December 2008
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