Chin. Phys. Lett.  2009, Vol. 26 Issue (1): 017301    DOI: 10.1088/0256-307X/26/1/017301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
GUO Lun-Chun, WANG Xiao-Liang, XIAO Hong-Ling, RAN Jun-Xue, Wang Cui-Mei, MA Zhi-Yong, LUO Wei-Jun, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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GUO Lun-Chun, WANG Xiao-Liang, XIAO Hong-Ling et al  2009 Chin. Phys. Lett. 26 017301
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Abstract Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrödinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value yc, and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier yc is exceeded. Our calculations also show that the critical AlN content of the second barrier yc will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).
Keywords: 73.40.Kp      02.60.Cb      85.30.De     
Received: 11 November 2008      Published: 24 December 2008
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  02.60.Cb (Numerical simulation; solution of equations)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/1/017301       OR      https://cpl.iphy.ac.cn/Y2009/V26/I1/017301
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GUO Lun-Chun
WANG Xiao-Liang
XIAO Hong-Ling
RAN Jun-Xue
Wang Cui-Mei
MA Zhi-Yong
LUO Wei-Jun
WANG Zhan-Guo
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