| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Negative Magnetoresistivity of ErBi and Its Crystal-Field Levels |
| LIU Zhao-Sen1, Divis Martin2, Sechovsky Vladimir2 |
| 1Faculty of Mathematics and Physics, Nanjing University of Information Science and Technology, Nanjing 2100442Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic |
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| Cite this article: |
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LIU Zhao-Sen, Divis Martin, Sechovsky Vladimir 2009 Chin. Phys. Lett. 26 017201 |
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Abstract A theoretical approach is generalized and employed in this work to evaluate the magnetoresistivity of ErBi in external magnetic fields. The calculated results and theoretical analyses show that when an external magnetic field is applied in the z-direction, the magnetoresistivity can be reduced considerably due to the degeneracy lifting of the crystal-field levels. However, when the magnetic field is exerted along the x-axis, the magnetoresistivity will be increased because of the formations of new magnetic states of the Er ion and its transitions within and between these new states.
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| Keywords:
72.10.-d
75.47.-m
75.10.Dg
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Received: 11 June 2008
Published: 24 December 2008
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| PACS: |
72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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75.10.Dg
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(Crystal-field theory and spin Hamiltonians)
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